- Package / Case :
-
- 10-VFDFN Exposed Pad (4)
- 10-WDFN Exposed Pad (9)
- 10-WFDFN Exposed Pad (2)
- 12-WFBGA, DSBGA (2)
- 16-SOIC (0.154", 3.90mm Width) (2)
- 8-PowerSOIC (0.154", 3.90mm Width) (2)
- 8-SOIC (0.154", 3.90mm Width) (17)
- 8-SOIC (0.154", 3.90mm Width) Exposed Pad (7)
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad (3)
- 8-VDFN Exposed Pad (2)
- 8-WDFN Exposed Pad (2)
- 9-VFDFN Exposed Pad (4)
- Die (2)
- SOT-23-6 (2)
- Series :
- Packaging :
- Input Type :
- Operating Temperature :
- Part Status :
- Channel Type :
- Driven Configuration :
- Gate Type :
- Logic Voltage - VIL, VIH :
- Current - Peak Output (Source, Sink) :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Input Type | Number of Drivers | Mounting Type | Operating Temperature | Part Status | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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2,956
In-stock
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Infineon Technologies | IC DVR HALF-BRDG SELF OSC 8SOIC | 8-SOIC (0.154", 3.90mm Width) | Automotive, AEC-Q100 | Tube | RC Input Circuit | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | 10 V ~ 15 V | 8-SO | 0 | 190 | Synchronous | Half-Bridge | N-Channel MOSFET | - | 1A, 1A | 100V | 40ns, 20ns | |||||
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3,189
In-stock
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Infineon Technologies | IC DVR FULL BRIDGE HI/LOW 16SOIC | 16-SOIC (0.154", 3.90mm Width) | - | Tube | RC Input Circuit | Surface Mount | -40°C ~ 125°C (TJ) | Obsolete | 9.5 V ~ 15 V | 16-SOIC | 0 | 180 | Synchronous | Half-Bridge | N-Channel MOSFET | - | 1.2A, 1.2A | 100V | 40ns, 20ns | |||||
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5,052
In-stock
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Infineon Technologies | IC DRVR HALF-BRDG SELF-OSC 8SOIC | 8-SOIC (0.154", 3.90mm Width) | Automotive, AEC-Q100 | Tape & Reel (TR) | RC Input Circuit | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | 10 V ~ 15 V | 8-SOIC | 0 | 2500 | Independent | Half-Bridge | N-Channel MOSFET | - | 1A, 1A | 100V | 40ns, 20ns | |||||
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5,807
In-stock
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Infineon Technologies | IC DRVR HALF-BRDG SELF-OSC 8SOIC | 8-SOIC (0.154", 3.90mm Width) | Automotive, AEC-Q100 | Tube | RC Input Circuit | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | 10 V ~ 15 V | 8-SOIC | 0 | 190 | Independent | Half-Bridge | N-Channel MOSFET | - | 1A, 1A | 100V | 40ns, 20ns | |||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 3A 8SOPWR | 8-PowerSOIC (0.154", 3.90mm Width) | - | Tube | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 8-SO PowerPad | 0 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 3A, 3A | 100V | 430ns, 260ns | |||||||
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6,826
In-stock
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Infineon Technologies | IC DRIVER FULL BRIDGE 16-SOIC | 16-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | RC Input Circuit | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9.5 V ~ 15 V | 16-SOIC | 0 | 2500 | Synchronous | Half-Bridge | N-Channel MOSFET | - | 1.2A, 1.2A | 100V | 40ns, 20ns | |||||
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Texas Instruments | IC HALF-BRIDGE GATE DRVR 10WSON | 10-WDFN Exposed Pad | Automotive, AEC-Q100 | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 4.5 V ~ 5.5 V | 10-WSON (4x4) | 0 | 4500 | Independent | Half-Bridge | N-Channel MOSFET | - | 1.2A, 5A | 100V | 7ns, 3.5ns | ||||||
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4,845
In-stock
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Monolithic Power Systems Inc. | IC GATE DRIVER | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 16 V | 8-SOIC-EP | 0 | Independent | Half-Bridge | N-Channel MOSFET | 1V, 2.4V | - | 100V | 15ns, 9ns | ||||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 8MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 8-MSOP-PowerPad | 10000 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 1A, 1A | 100V | 990ns, 715ns | |||||||
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Texas Instruments | UCC27212DPRR | 10-WDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 140°C (TJ) | Active | 7 V ~ 17 V | 10-WSON (4x4) | 0 | 3000 | Independent | Half-Bridge | N-Channel MOSFET | 1.2V, 2.55V | 4A, 4A | 100V | 7.8ns, 6ns | ||||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 8WSON | 8-WDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 8-WSON (4x4) | 9000 | 4500 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 3A, 3A | 100V | 430ns, 260ns | ||||||
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7,370
In-stock
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Renesas Electronics America Inc. | IC DRVR H-BRDG 100V 1.25A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 8-SOIC | 0 | Independent | Half-Bridge | N-Channel MOSFET | 1.4V, 2.2V | 1.25A, 1.25A | 100V | 16ns, 16ns | ||||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 8MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 8-MSOP-PowerPad | 0 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 1A, 1A | 100V | 990ns, 715ns | |||||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 10WSON | 10-WDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 10-WSON (4x4) | 10000 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 1A, 1A | 100V | 990ns, 715ns | |||||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 10WSON | 10-WDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 10-WSON (4x4) | 10000 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 2A, 2A | 100V | 570ns, 430ns | |||||||
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7,210
In-stock
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Texas Instruments | IC GATE DVR HI/LO SIDE 10WSON | 10-WDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 10-WSON (4x4) | 0 | 4500 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 3A, 3A | 100V | 430ns, 260ns | |||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 10WSON | 10-WDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 10-WSON (4x4) | 0 | 4500 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 2A, 2A | 100V | 570ns, 430ns | ||||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 10WSON | 10-WDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 10-WSON (4x4) | 0 | 4500 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 1A, 1A | 100V | 990ns, 715ns | ||||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 8MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 8-MSOP-PowerPad | 0 | 3500 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 1A, 1A | 100V | 990ns, 715ns | ||||||
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7,128
In-stock
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Texas Instruments | IC GATE DVR HI/LO SIDE 3A 8SOPWR | 8-PowerSOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 8-SO PowerPad | 10000 | 2500 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 3A, 3A | 100V | 430ns, 260ns | |||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 8-SOIC | 0 | 2500 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 2A, 2A | 100V | 570ns, 430ns | ||||||
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Texas Instruments | IC GATE DVR HI/LO SIDE 1A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 8-SOIC | 0 | 2500 | Independent | Half-Bridge | N-Channel MOSFET | 2.3V, - | 1A, 1A | 100V | 990ns, 715ns | ||||||
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Renesas Electronics America Inc. | IC MOSFET DRVR 100V 1.25A 9-DFN | 9-VFDFN Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 14 V | 9-DFN-EP (3x3) | 5100 | Independent | Half-Bridge | N-Channel MOSFET | 3.7V, 7.4V | 1.25A, 1.25A | 100V | 16ns, 16ns | |||||||
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7,772
In-stock
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Monolithic Power Systems Inc. | IC GATE DRIVER | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -40°C ~ 140°C (TJ) | Active | 9 V ~ 16 V | 8-SOIC-EP | 0 | Independent | Half-Bridge | N-Channel MOSFET | 1V, 2.4V | 2.5A, 2.5A | 100V | 12ns, 9ns | ||||||
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4,869
In-stock
|
Monolithic Power Systems Inc. | IC GATE DRIVER | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 18 V | 8-SOIC-EP | 0 | Independent | Half-Bridge | N-Channel MOSFET | 1V, 2.4V | 2.5A, 2.5A | 100V | 12ns, 9ns | ||||||
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7,783
In-stock
|
Monolithic Power Systems Inc. | IC GATE DRIVER | 10-VFDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 4.5 V ~ 18 V | 10-QFN (3x3) | 0 | Independent | Half-Bridge | N-Channel MOSFET | 1V, 2.4V | 2.5A, 2.5A | 100V | 12ns, 9ns | ||||||
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3,094
In-stock
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Monolithic Power Systems Inc. | IC GATE DRIVER | 8-VDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Active | 9 V ~ 18 V | 8-QFN (3x3) | 0 | Independent | Half-Bridge | N-Channel MOSFET | 1V, 2.4V | 2.5A, 2.5A | 100V | 12ns, 9ns | ||||||
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Renesas Electronics America Inc. | IC DRVR H-BRDG 100V 1.25A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Last Time Buy | 9 V ~ 14 V | 8-SOIC | 0 | Independent | Half-Bridge | N-Channel MOSFET | 1.4V, 2.2V | 1.25A, 1.25A | 100V | 16ns, 16ns | |||||||
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Renesas Electronics America Inc. | IC DRVR H-BRDG 100V 1.25A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TJ) | Last Time Buy | 9 V ~ 14 V | 8-SOIC | 0 | Independent | Half-Bridge | N-Channel MOSFET | 3.7V, 7.4V | 1.25A, 1.25A | 100V | 16ns, 16ns | |||||||
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ON Semiconductor | HIGH SIDE AND LOW SIDE GA | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | Automotive, AEC-Q100 | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 150°C (TJ) | Active | 8 V ~ 16 V | 8-SOIC-EP | 5000 | 2500 | Synchronous | High-Side or Low-Side | N-Channel MOSFET | 2V, 1.8V | 3A, 6A | 100V | 6ns, 4ns |