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23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Input Type | Number of Drivers | Mounting Type | Operating Temperature | Part Status | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO263-5 | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-263-5 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO220-5 | TO-220-5 Formed Leads | - | Tube | Non-Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-220-5 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO220-5 | TO-220-5 | - | Tube | Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-220-5 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO263-5 | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-263 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8SOIC | 8-SOIC (0.154", 3.90mm Width) | Automotive, AEC-Q100 | Tape & Reel (TR) | Non-Inverting | Surface Mount | -40°C ~ 125°C (TA) | Last Time Buy | 10 V ~ 20 V | 8-SOIC | 0 | 2500 | Independent | Half-Bridge | N-Channel MOSFET | 0.7V, 2.5V | 2A, 2A | 200V | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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2,890
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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2,296
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DFN | 8-VDFN Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DFN-EP (5x4) | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A DUAL HS TO263-5 | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-263-5 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A DUAL HS TO220-5 | TO-220-5 | - | Tube | Non-Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-220-5 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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2,841
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns | ||||||
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2,891
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | - | 22ns, 15ns |