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17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Type | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Operating Supply Voltage | Operating Frequency | Operating Supply Current | NF - Noise Figure | Gain | P1dB - Compression Point | OIP3 - Third Order Intercept | Test Frequency | |
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Qorvo | RF Amplifier DC-12GHz Gain 13dB P1dB 15.2dBm@6GHz | Cellular | - 40 C | + 85 C | Reel | 5 V | DC to 12 GHz | 50 mA | 4.9 dB | 10 dB | 12 dBm | 24 dBm | 8 GHz to 12 GHz | ||||||
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Analog Devices / Hittite | RF Amplifier lo Noise amp SMT, 2 - 4 GHz | Low Noise Amplifier | SMD/SMT | QFN-EP-16 | - 40 C | + 85 C | Cut Tape | 6 V | 2 GHz to 4 GHz | 100 mA | 3 dB | 10 dB | 21 dBm | 36 dBm | |||||
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Analog Devices / Hittite | RF Amplifier dig Variable-Gain | MMIC Variable Gain Amplifier | SMD/SMT | QFN-32 | - 40 C | + 85 C | Reel | 5 V | 70 MHz to 4 GHz | 2.5 mA | 4.5 dB | 10 dB | 22 dBm | 39 dBm | |||||
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Analog Devices / Hittite | RF Amplifier lo Noise amp Chip, 2 - 4 GHz | Low Noise Amplifier | SMD/SMT | Die | - 55 C | + 85 C | Gel Pack | 6 V | 2 GHz to 4 GHz | 100 mA | 2.6 dB | 10 dB | 21 dBm | 36 dBm | |||||
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Analog Devices | RF Amplifier dig Variable-Gain | MMIC Variable Gain Amplifier | SMD/SMT | QFN-32 | - 40 C | + 85 C | Cut Tape | 5 V | 70 MHz to 4 GHz | 2.5 mA | 4.5 dB | 10 dB | 22 dBm | 39 dBm | |||||
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Qorvo | RF Amplifier 2-30GHz Gain 10dB P1dB 19dBm GaAs | Gain Block Amplifier | SMD/SMT | QFN-32 | - 40 C | + 85 C | Waffle | 10.4 V | 30 GHz | 135 mA | 4 dB | 10 dB | 19 dBm | 25 dBm | 16 GHz | ||||
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Maxim Integrated | RF Amplifier Dual RF Power Amplifier Linearizer | Power Amplifier | SMD/SMT | QFN-80 | - 40 C | + 100 C | Tube | + 1.8 V | 698 MHz to 2.7 GHz | 10 dB | |||||||||
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NXP Semiconductors | RF Amplifier 1CH 4.5dB 24V 43mA | Low Noise Amplifier | SMD/SMT | SOT-363-6 | - 10 C | + 70 C | Reel | 5 V | 40 MHz to 1 GHz | 43 mA | 4.5 dB | 10 dB | 14 dBm | 29 dBm | 1 GHz | ||||
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NXP Semiconductors | RF Amplifier 1CH 4.5dB 5V 43mA | Low Noise Amplifier | SMD/SMT | SOT-363-6 | - 10 C | + 70 C | Reel | 5 V | 40 MHz to 1 GHz | 43 mA | 4.5 dB | 10 dB | 14 dBm | 29 dBm | 1 GHz | ||||
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NXP Semiconductors | RF Amplifier 1GHZ WB LO-NOISE AMPLIFIER W/ BYPASS | SMD/SMT | SOT-363-6 | Reel | 40 MHz to 1 GHz | 3.8 dB | 10 dB | 12 dBm | 29 dBm | ||||||||||
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NXP Semiconductors | RF Amplifier 1CH 4.5dB 5V 43mA | Low Noise Amplifier | SMD/SMT | SOT-363-6 | - 10 C | + 70 C | Reel | 5 V | 40 MHz to 1 GHz | 43 mA | 4.5 dB | 10 dB | 14 dBm | 29 dBm | 1 GHz | ||||
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Qorvo | RF Amplifier DC-12GHz Gain 13dB P1dB 15.2dBm@6GHz | Cellular | - 40 C | + 85 C | Gel Pack | 5 V | DC to 12 GHz | 50 mA | 4.9 dB | 10 dB | 12 dBm | 24 dBm | 8 GHz to 12 GHz | ||||||
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Analog Devices / Hittite | RF Amplifier GaAs HEMT WBand Driver amp, DC - 65 GHz | Driver Amplifier | SMD/SMT | Die | 0 C | + 70 C | Gel Pack | 5 V, 8 V | 0.5 GHz to 65 GHz | 60 mA | - | 10 dB | |||||||
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NXP Semiconductors | RF Amplifier 1 GHZ WIDEBAND LOW-NOISE AMP | SMD/SMT | SOT-363-6 | Reel | 40 MHz to 1 GHz | 3.8 dB | 10 dB | 12 dBm | 29 dBm | ||||||||||
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Analog Devices / Hittite | RF Amplifier lo Noise amp SMT, 2 - 4 GHz | Low Noise Amplifier | SMD/SMT | QFN-EP-16 | - 40 C | + 85 C | Reel | 6 V | 2 GHz to 4 GHz | 100 mA | 3 dB | 10 dB | 21 dBm | 36 dBm | |||||
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Maxim Integrated | RF Amplifier Dual RF Power Amplifier Linearizer | Power Amplifier | SMD/SMT | QFN-80 | - 40 C | + 100 C | Tube | + 1.8 V | 698 MHz to 2.7 GHz | 10 dB | |||||||||
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NJR | RF Amplifier UHF Band Low Noise Amp GaAs MMIC | Low Noise Amplifier | SMD/SMT | USB-6-A8 | - 40 C | + 85 C | 2.7 V | 620 MHz | 3.4 mA | 1.4 dB | 10 dB | - 5 dBm |