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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Configuration | Technology | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Emitter- Base Voltage VEBO | DC Collector/Base Gain hfe Min | Continuous Collector Current | Transistor Type | |
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Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | Case244-04 | + 200 C | Tray | Si | NPN | 17 V | 2.5 V | 200 mA | Bipolar Power | ||||||
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Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | SMD/SMT | Case 332A-03 | + 200 C | Tray | Si | NPN | 20 V | 3.5 V | 200 mA | Bipolar Power | ||||||
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Maxim Integrated | RF Bipolar Transistors 3.6V 1W RF Pwr Trans for 900MHz Ap | SMD/SMT | SOIC-8 | + 85 C | Tube | Single Dual Base Dual Collector Quad Emitter | Si | NPN | 17 V | 2.3 V | 200 mA | Bipolar Power | |||||
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Maxim Integrated | RF Bipolar Transistors 3.6V 1W RF Pwr Trans for 900MHz Ap | SMD/SMT | SOIC-8 | + 85 C | Tube | Single | Si | NPN | 17 V | 2.3 V | 200 mA | Bipolar Power | |||||
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Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | SMD/SMT | SOIC-8 | + 200 C | Tray | Si | NPN | 16 V | 3 V | 200 mA | Bipolar Power | ||||||
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Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | Through Hole | TO-92 | + 200 C | Tray | Si | NPN | 17 V | 2.5 V | 200 mA | Bipolar | ||||||
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Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | SMD/SMT | SOIC-8 | + 200 C | Tube | Si | NPN | 15 V | 2.5 V | 200 mA | Bipolar | ||||||
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Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | SMD/SMT | Macro-X | + 150 C | Tray | Si | NPN | 15 V | 2.5 V | 90 | 200 mA | Bipolar | |||||
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Advanced Semiconductor, Inc. | RF Bipolar Transistors RF Transistor | SMD/SMT | SO-8 | - | Bulk | - | Si | NPN | 15 V | 2.5 V | 200 mA | Bipolar | |||||
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Maxim Integrated | RF Bipolar Transistors 3.6V 1W RF Pwr Trans for 900MHz Ap | SMD/SMT | SOIC-8 | + 85 C | Reel | Single | Si | NPN | 17 V | 2.3 V | 200 mA | Bipolar Power | |||||
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Maxim Integrated | RF Bipolar Transistors 3.6V 1W RF Pwr Trans for 900MHz Ap | SMD/SMT | + 85 C | Reel | Single Dual Base Dual Collector Quad Emitter | Si | NPN | 17 V | 2.3 V | 200 mA | Bipolar Power |