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Pd - Power Dissipation :
Technology :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Transistor Type :
0 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
TGF2965-SM
Per Unit
$45.0000
RFQ
Qorvo RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V SMD/SMT QFN-16 - Tray 6 W 7.5 W GaN SiC P-Channel 32 V 600 mA - 2.7 V 18 dB HEMT -
J174,126
Per Unit
$0.2350
RFQ
NXP Semiconductors RF JFET Transistors AMMORA FET-RFSS Through Hole TO-92 + 150 C Ammo Pack   300 mW Si P-Channel 30 V 135 mA 30 V   JFET 30 V
J176,126
Per Unit
$0.2350
RFQ
NXP Semiconductors RF JFET Transistors J176/TO-92/STANDARD MARKING * Through Hole SC-43 (TO-92) + 150 C Ammo Pack   300 mW Si P-Channel 30 V 35 mA 30 V   JFET 30 V
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