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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Technology | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | Maximum Drain Gate Voltage | |
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Qorvo | RF JFET Transistors DC-12GHz 1mm Pwr pHEMT (0.35um) | SMD/SMT | Die 4 | + 150 C | Gel Pack | GaAs | 12 V | 300 mA | - 14 V | 11 dB | pHEMT | ||||||
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Qorvo | RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE | SMD/SMT | + 150 C | Tray | 5.6 W | GaAs | 12 V | 517 mA | - 7 V | 10.4 dB | pHEMT | ||||||
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Qorvo | RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56% | SMD/SMT | 0.41 mm x 0.34 mm x 0.1 mm | + 150 C | Tray | 4.2 W | GaAs | 12 V | 259 mA | - 7 V | 11.5 dB | pHEMT | - 12 V | ||||
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Qorvo | RF JFET Transistors DC-12GHz 12mm Pwr pHEMT (0.35um) | SMD/SMT | Die 18 | + 150 C | Gel Pack | GaAs | 12 V | 3.6 A | - 8 V | 11 dB | pHEMT | ||||||
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Qorvo | RF JFET Transistors DC-20GHz 1.2mm Pwr pHEMT (0.35um) | SMD/SMT | Die 4 | + 150 C | Tray | GaAs | 12 V | 360 mA | - 14 V | 8 dB | pHEMT |