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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
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Per Unit
$154.1800
RFQ
Wolfspeed / Cree RF JFET Transistors GaN HEMT 2.7-3.1GHz, 60 Watt SMD/SMT + 107 C Reel 75 W 52 W GaN N-Channel 150 V 10.4 A - 10 V, 2 V 14.5 dB HEMT 50 V
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