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Vgs - Gate-Source Breakdown Voltage :
Maximum Drain Gate Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
CGH60030D
Per Unit
$75.1400
RFQ
Wolfspeed / Cree RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt SMD/SMT Bare Die Waffle 30 W - GaN N-Channel 120 V 3 A - 10 V to + 2 V 15 dB HEMT -
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Per Unit
$98.0900
RFQ
Wolfspeed / Cree RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt SMD/SMT   Gel Pack 30 W 28.8 W GaN N-Channel 120 V 3 A - 10 V, 2 V 12 dB HEMT 28 V
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