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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type
TGF2929-HM
Per Unit
$375.0000
RFQ
Qorvo RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN SMD/SMT Flange Ceramic-2 + 85 C Waffle 132 W 140 W GaN SiC N-Channel 50 V 7.2 A - 2.8 V 17.4 dB HEMT
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