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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
CGHV1J006D
Per Unit
$33.6000
RFQ
Wolfspeed / Cree RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt SMD/SMT Bare Die Gel Pack 6 W GaN N-Channel 100 V 0.8 A - 10 V to + 2 V 17 dB HEMT -
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