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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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Qorvo | RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN | SMD/SMT | NI-360 | + 85 C | Tray | 70 W | 64 W | GaN SiC | N-Channel | 50 V | 2.5 A | 145 V | 20 dB | HEMT | ||||
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Qorvo | RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN | Screw | NI-360 | + 85 C | Tray | 70 W | 64 W | GaN SiC | N-Channel | 50 V | 2.5 A | 145 V | 20 dB | HEMT | ||||
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Broadcom / Avago | RF JFET Transistors Transistor GaAs High Linearity | SMD/SMT | LPCC-8 | + 150 C | Bulk | 1 W | GaAs | 7 V | 300 mA | - 5 V to 1 V | 20 dB | EpHEMT | ||||||
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Broadcom / Avago | RF JFET Transistors Transistor GaAs High Linearity | SMD/SMT | LPCC-8 | + 150 C | Reel | 1 W | GaAs | 7 V | 300 mA | - 5 V to 1 V | 20 dB | EpHEMT | ||||||
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Broadcom / Avago | RF JFET Transistors Transistor GaAs High Linearity | SMD/SMT | LPCC-8 | + 150 C | Reel | 1 W | GaAs | 7 V | 300 mA | - 5 V to 1 V | 20 dB | EpHEMT |