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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type
T1G3000532-SM
Per Unit
$68.0000
RFQ
Qorvo RF JFET Transistors .03-3.5GHz PAE 64.7% P3dB 5.7W @3GHz 32V SMD/SMT QFN-32 Tray 5.7 W 9.1 W GaN SiC N-Channel 32 V 0.6 A - 2.7 V 15.7 dB HEMT
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