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Mounting Style :
Package / Case :
Maximum Operating Temperature :
Technology :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Maximum Drain Gate Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
CGHV50200F
Per Unit
$769.9700
RFQ
Wolfspeed / Cree RF JFET Transistors GaN HEMT 4.4-5.0GHz, 200 Watt Screw 4402015 + 150 C Tray 180 W - GaN N-Channel 150 V 17 A - 10 V to + 2 V 11.5 dB HEMT -
QPD3601
Per Unit
$117.0000
RFQ
Qorvo RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN SMD/SMT NI400-2 + 85 C Waffle 180 W 60.9 W GaN SiC N-Channel 50 V 360 mA   22 dB HEMT 55 V
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