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IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Gain | Transistor Type | |
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MACOM | RF JFET Transistors DC-4 GHz Gain 13.5dB GaN SiC | SMD/SMT | SOT89-3 | + 95 C | Reel | 5 W | 12 W | GaN SiC | N-Channel | 50 V | 0.3 A | 13.5 dB | HEMT |