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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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Qorvo | RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB | SMD/SMT | QFN-20 | + 225 C | Tray | 22 W | 49 W | GaN SiC | N-Channel | 32 V | 1.8 A | - 2.7 V | 11 dB | HEMT | ||||
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Qorvo | RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB | SMD/SMT | QFN-20 | + 225 C | Tray | 19 W | 33 W | GaN SiC | N-Channel | 32 V | 1.3 A | - 2.7 V | 11 dB | HEMT |