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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Gain Transistor Type Maximum Drain Gate Voltage
QPD3601
Per Unit
$117.0000
RFQ
Qorvo RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN SMD/SMT NI400-2 + 85 C Waffle 180 W 60.9 W GaN SiC N-Channel 50 V 360 mA 22 dB HEMT 55 V
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