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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Maximum Operating Temperature Packaging Pd - Power Dissipation Technology Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type Maximum Drain Gate Voltage
TGF2025
Per Unit
$6.1000
RFQ
Qorvo RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm SMD/SMT + 150 C Gel Pack 0.89 W GaAs 8 V 81 mA - 15 V 14 dB pHEMT 12 V
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