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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Gain | Transistor Type | |
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Broadcom / Avago | RF JFET Transistors Transistor GaAs Low Noise | SMD/SMT | Mini PAK | + 160 C | Reel | 400 mW | GaAs | N-Channel | 5.5 V | 305 mA | - 5 V | 15 dB | pHEMT | ||||
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Broadcom / Avago | RF JFET Transistors Transistor GaAs Low Noise | SMD/SMT | Mini PAK | + 160 C | Reel | 400 mW | GaAs | N-Channel | 5.5 V | 305 mA | - 5 V | 15 dB | pHEMT | ||||
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NXP Semiconductors | RF JFET Transistors N-Channel Single 40V 20mA | Through Hole | TO-92 | Ammo Pack | 400 mW | Si | N-Channel | 40 V | 20 mA | 40 V | JFET | ||||||
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Broadcom / Avago | RF JFET Transistors Transistor GaAs Low Noise | SMD/SMT | Mini PAK | + 160 C | Bulk | 400 mW | GaAs | N-Channel | 5.5 V | 305 mA | - 5 V | 15 dB | pHEMT | ||||
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NXP Semiconductors | RF JFET Transistors N-Channel Single '+/- 25V 80mA | Through Hole | TO-92 | Ammo Pack | 400 mW | Si | N-Channel | 25 V | 10 mA | 25 V | JFET | ||||||
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NXP Semiconductors | RF JFET Transistors N-Channel Single '+/- 25V 80mA | Through Hole | TO-92 | Ammo Pack | 400 mW | Si | N-Channel | 25 V | 80 mA | 25 V | JFET |