- Package / Case :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | M244 | + 200 C | Tray | 350 W | Si | N-Channel | 130 V | 40 A | 15 dB | ||||||
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | Case 211-11 | + 200 C | Tray | Si | N-Channel | 65 V | 16 A | ||||||||
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | Case 211-11 | + 200 C | Tray | Si | N-Channel | 65 V | 13 A | ||||||||
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | Case 211-07 | + 200 C | Tray | Si | N-Channel | 65 V | 4.5 A | ||||||||
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | SOT-262A | + 200 C | Tray | Si | N-Channel | 125 V | 40 A | ||||||||
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | Case 211-07 | + 200 C | Tray | Si | N-Channel | 65 V | 9 A | ||||||||
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | SOT-262A | + 200 C | Tray | Si | N-Channel | 125 V | 18 A | 300 mOhms | |||||||
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | + 200 C | Tray | Si | N-Channel | 65 V | 4.25 A | ||||||||||
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | + 200 C | Tray | Si | N-Channel | 65 V | 4.25 A | ||||||||||
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Advanced Semiconductor, Inc. | RF MOSFET Transistors RF Transistor | SMD/SMT | SOT-262A | + 200 C | Tray | Si | N-Channel | 125 V | 40 A |