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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Gain | |
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NXP / Freescale | RF MOSFET Transistors VHV6 100W 50V ISM | SMD/SMT | NI-780-4 | + 150 C | Reel | 100 W | Si | N-Channel | 141 V | 26 dB | |||||||
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MACOM | RF MOSFET Transistors 400MHz 28Volt 100W Gain 10dB | Case 333-4 | + 150 C | Bulk | 100 W | Si | N-Channel | 65 V | 13 A | 10 dB | |||||||
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MACOM | RF MOSFET Transistors 5-400MHz 100Watts 28Volt Gain 12dB | SMD/SMT | Case 744A-01 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 16 A | 12 dB | ||||||
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Microsemi | RF MOSFET Transistors RF MOSFET (VDMOS) | Through Hole | TO-247-3 | + 150 C | Reel | 100 W | Si | N-Channel | 500 V | 9 A | 15 dB | ||||||
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Microsemi | RF MOSFET Transistors RF MOSFET (VDMOS) | Through Hole | TO-247-3 | + 150 C | 100 W | Si | N-Channel | 500 V | 9 A | 15 dB | |||||||
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STMicroelectronics | RF MOSFET Transistors N-Ch 65 Volt 14 Amp | SMD/SMT | M246 | + 150 C | Tube | 100 W | Si | N-Channel | 65 V | 14 A | 14 dB at 860 MHz | ||||||
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MACOM | RF MOSFET Transistors 5-500MHz 100Watts 28Volt Gain 8.8dB | SMD/SMT | Case 333-04 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 13 A | 8.8 dB | ||||||
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MACOM | RF MOSFET Transistors 100-500MHz 100Watts 28Volt 10dB | SMD/SMT | Case 744A-01 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 12 A | 10 dB at 500 MHz | ||||||
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NXP / Freescale | RF MOSFET Transistors HV8-900 100W 28V NI1230HS | SMD/SMT | NI-1230S | + 150 C | Reel | 100 W | Si | N-Channel | 70 V | 19.6 dB at 940 MHz | |||||||
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STMicroelectronics | RF MOSFET Transistors RF Power LDMOS Transistor | SMD/SMT | M246 | + 150 C | Bulk | 100 W | Si | N-Channel | 72 V | 14 A | 14 dB at 860 MHz | ||||||
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Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 1930-1990 ... | SMD/SMT | H-36248-2 | + 150 C | Reel | 100 W | Si | N-Channel | 65 V | 900 mA | 50 mOhms | 17 dB | |||||
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Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36248-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 900 mA | 50 mOhms | 17 dB | |||||
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Infineon Technologies | RF MOSFET Transistors RF LDMOS FETs 340W 30V 1930-1990 MH... | SMD/SMT | H-37275-6-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 2.6 A | 19 dB |