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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Length | Width | Height | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Frequency | Gain | Number of Pins | Element Configuration | Max Operating Temperature | Gate to Source Voltage (Vgs) | Mount | Min Operating Temperature | RoHS | Max Power Dissipation | |
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6,498
In-stock
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Qorvo | 6.5 W | 20.32 mm | 10.16 mm | 3.48 mm | 2.655 GHz | 13 dB | Single | 15 V | Screw | 117 W | |||||||||||||||||
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NXP / Freescale | RF MOSFET Transistors RF LDMOS FET PLD1.5N | SMD/SMT | PLD-1.5 | + 150 C | Reel | 8 W | Si | N-Channel | 40 V | 4 A | 13 dB | |||||||||||||||||
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MACOM | RF MOSFET Transistors 5-175MHz 150Watts 50Volt Gain 18dB | SMD/SMT | Case 211-11 | + 150 C | Tray | 150 W | Si | N-Channel | 125 V | 16 A | 13 dB | |||||||||||||||||
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NXP / Freescale | RF MOSFET Transistors RF LDMOS FET PLD1.5N | SMD/SMT | PLD-1.5 | + 150 C | Reel | 8 W | Si | N-Channel | 40 V | 4 A | 13 dB | |||||||||||||||||
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MACOM | RF MOSFET Transistors | Case 244-4 | + 150 C | Tray | 150 W | Si | N-Channel | 125 V | 16 A | 13 dB | ||||||||||||||||||
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Microsemi | RF MOSFET Transistors RF MOSFET (VDMOS) | Through Hole | TO-247-3 | + 150 C | 90 W | Si | N-Channel | 450 V | 9 A | 13 dB | ||||||||||||||||||
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Microsemi | RF MOSFET Transistors RF MOSFET (VDMOS) | Through Hole | TO-247-3 | + 150 C | Reel | 90 W | Si | N-Channel | 450 V | 9 A | 13 dB | |||||||||||||||||
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Microsemi | RF MOSFET Transistors RF MOSFET (VDMOS) | Through Hole | TO-247-3 | + 150 C | Reel | 150 W | Si | N-Channel | 500 V | 14 A | 13 dB | |||||||||||||||||
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Microsemi | RF MOSFET Transistors RF MOSFET (VDMOS) | Through Hole | TO-247-3 | + 150 C | Reel | 150 W | Si | N-Channel | 500 V | 14 A | 13 dB | |||||||||||||||||
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Microsemi | RF MOSFET Transistors RF MOSFET (VDMOS) | + 150 C | 150 W | Si | N-Channel | 1 kV | 6.5 A | 13 dB | ||||||||||||||||||||
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NXP Semiconductors | RF MOSFET Transistors TRANS LDMOS NCH 75V | SMD/SMT | SOT-502B-3 | + 150 C | Tube | 200 W | Si | N-Channel | 75 V | 150 mA | 60 mOhms | 13 dB | ||||||||||||||||
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NXP Semiconductors | RF MOSFET Transistors 2.4-2.5GHz 65V 13dB | SMD/SMT | SOT-539B-5 | Tube | 250 W | Si | 65 V | 20 mA | 80 mOhms | 13 dB | ||||||||||||||||||
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NXP Semiconductors | RF MOSFET Transistors TRANS LDMOS NCH 75V | SMD/SMT | SOT-502A-3 | + 150 C | Tube | 200 W | Si | N-Channel | 75 V | 150 mA | 60 mOhms | 13 dB | ||||||||||||||||
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Toshiba | RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 0.1A 0.25W... | SMD/SMT | SOT-343-4 | Reel | 200 mW | Si | N-Channel | 20 V | 100 mA | 13 dB |