- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Test Current | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Frequency | Gain | Number of Pins | Current Rating | Voltage Rating | Number of Elements | Noise Figure | Max Frequency | Max Operating Temperature | Gate to Source Voltage (Vgs) | Mount | Min Operating Temperature | Case/Package | RoHS | Max Power Dissipation | Test Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
13,321
In-stock
|
Infineon | 10 mA | 45 MHz | 27 dB | 3.0 | 30 mA | 20 V | 2.1 dB | 300 MHz | 12 V | Surface Mount | TO-236-3 | 200 mW | 10 V | ||||||||||||||||
|
|
NXP / Freescale | RF MOSFET Transistors VHV6E 25W50V TO270-2G | SMD/SMT | + 150 C | Reel | Si | N-Channel | 142 V | 27 dB | ||||||||||||||||||||||
|
|
NXP / Freescale | RF MOSFET Transistors VHV6E 25W50V TO270-2 | SMD/SMT | TO-270-2 | Reel | Si | - 0.5 V, + 133 V | 27 dB | |||||||||||||||||||||||
|
|
NXP / Freescale | RF MOSFET Transistors VHV6 100W 50V ISM | SMD/SMT | NI-780S-4 | Reel | 100 W | Si | 27 dB |