- Maximum Operating Temperature :
- Test Current :
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- Rds On - Drain-Source Resistance :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Operating Supply Voltage | Output Power | Technology | Test Current | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Frequency | Gain | Number of Pins | Current Rating | Voltage Rating | Number of Elements | Efficiency | Max Frequency | Element Configuration | Max Operating Temperature | Gate to Source Voltage (Vgs) | Mount | Halogen Free | Min Operating Temperature | Lead Free | RoHS | Max Output Power | Lifecycle Status | Max Power Dissipation | Test Voltage | |
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13,017
In-stock
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Wolfspeed | 1.93 GHz | 19 dB | 30 V | 33 % | 1.99 GHz | 340 W | ||||||||||||||||||||||||||||||
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3,844
In-stock
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Wolfspeed | 500 MHz | 19 dB | 48 V | 1.4 GHz | 25 W | |||||||||||||||||||||||||||||||
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29,439
In-stock
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Infineon | 100 W | 1.99 GHz | 19 dB | Dual | 10 V | |||||||||||||||||||||||||||||||
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16,970
In-stock
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Infineon | 50 W | 1.9 A | 1.99 GHz | 19 dB | 65 V | 30 V | ||||||||||||||||||||||||||||||
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1,685
In-stock
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Infineon | 28 V | 60 W | 2.15 A | 19 dB | 3.0 | 65 V | Halogen Free | Lead Free | 28 V | |||||||||||||||||||||||||||
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14,279
In-stock
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Infineon | 28 V | 110 W | 750 mA | 960 MHz | 19 dB | 3.0 | 65 V | 960 MHz | Surface Mount | Halogen Free | Lead Free | 50 W | 28 V | |||||||||||||||||||||||
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NXP / Freescale | RF MOSFET Transistors MV9 UHF 13.6V | SMD/SMT | TO-270-2 | + 150 C | Reel | 33 W | Si | N-Channel | - 0.5 V, + 40 V | 19 dB | |||||||||||||||||||||||||||
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NXP / Freescale | RF MOSFET Transistors AF 1.8GHZ 230W NI780S-6 | SMD/SMT | NI-780S-6 | + 150 C | Reel | 50 W | Si | N-Channel | - 500 mV, + 65 V | 1.8 A | 19 dB | ||||||||||||||||||||||||||
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NXP / Freescale | RF MOSFET Transistors MV9 UHF 13.6V | SMD/SMT | Reel | Si | - 0.5 V, + 40 V | 19 dB | |||||||||||||||||||||||||||||||
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NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | + 225 C | Tube | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | |||||||||||||||||||||||||||
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NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502A-3 | + 225 C | Tube | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | |||||||||||||||||||||||||||
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NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502B-3 | + 225 C | Reel | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | |||||||||||||||||||||||||||
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NXP Semiconductors | RF MOSFET Transistors Power LDMOS transistor | SMD/SMT | SOT-502A-3 | + 225 C | Reel | Si | 65 V | 1.3 A | 69 mOhms | 19 dB | |||||||||||||||||||||||||||
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NXP Semiconductors | RF MOSFET Transistors 2.4-2.5GHz 65V 19dB | SMD/SMT | SOT-975A-2 | Reel | 12 W | Si | 65 V | 10 mA | 1.3 Ohms | 19 dB | |||||||||||||||||||||||||||
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Infineon Technologies | RF MOSFET Transistors RF LDMOS FETs 340W 30V 1930-1990 MH... | SMD/SMT | H-37275-6-2 | + 150 C | Tray | 100 W | Si | N-Channel | 65 V | 2.6 A | 19 dB | ||||||||||||||||||||||||||
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Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 120 W 920-960 M... | SMD/SMT | H-37248-2 | + 150 C | Reel | 120 W | Si | N-Channel | 65 V | 750 mA | 0.07 Ohms at 10 V | 19 dB |