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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Polarity | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Frequency | Gain | Number of Pins | Current Rating | Number of Elements | Element Configuration | Max Operating Temperature | Power Dissipation | Emitter Base Voltage (VEBO) | Mount | Voltage Rating (DC) | Min Operating Temperature | Max Collector Current | Lead Free | Case/Package | RoHS | Collector Base Voltage (VCBO) | |
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3,850
In-stock
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Infineon | NPN | 6 GHz | 14.5 dB | 3.0 | 50 mA | Single | 300 mW | 2 V | Surface Mount | 12 V | 90 mA | Lead Free | SOT-23-3 | 20 V | ||||||||||||||||||
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NXP / Freescale | RF MOSFET Transistors LDMOS FET HI PWR TO272FN | SMD/SMT | TO-272-6 Wrap EP | + 150 C | Reel | 50 W | Si | N-Channel | 40 V | 12 A | 14.5 dB | ||||||||||||||||||||||
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NXP / Freescale | RF MOSFET Transistors LDMOS FET HI PWR TO272FN | SMD/SMT | TO-272-6 EP | + 150 C | Reel | 50 W | Si | N-Channel | 40 V | 12 A | 14.5 dB | ||||||||||||||||||||||
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STMicroelectronics | RF MOSFET Transistors RF Power Trans N-Channel | SMD/SMT | PowerSO-10RF-2 | + 165 C | Reel | 25 W | Si | N-Channel | 12.5 V | 7 A | 14.5 dB | ||||||||||||||||||||||
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NXP / Freescale | RF MOSFET Transistors HV8 2.1GHZ 160W NI780H-4 | SMD/SMT | NI-780-4 | + 150 C | Reel | 16 W | Si | N-Channel | 65 V | 14.5 dB | |||||||||||||||||||||||
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NXP / Freescale | RF MOSFET Transistors HV8 2.1GHZ 160W NI780S-4 | SMD/SMT | NI-780S-4 | + 150 C | Reel | 16 W | Si | N-Channel | 65 V | 14.5 dB |