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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Frequency | Gain | Number of Pins | Current Rating | Number of Elements | Max Frequency | Element Configuration | Max Operating Temperature | Gate to Source Voltage (Vgs) | Mount | Halogen Free | Min Operating Temperature | Lead Free | RoHS | Max Output Power | Max Power Dissipation | Test Voltage | |
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21,882
In-stock
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Infineon | 50 W | 2.14 GHz | 15.8 dB | 3.0 | 2.17 GHz | Surface Mount | Halogen Free | Lead Free | 220 W | 625 W | 30 V | ||||||||||||||||||||
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9,384
In-stock
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Infineon | 50 W | 2.14 GHz | 15.8 dB | 3.0 | Single | 12 V | 30 V | ||||||||||||||||||||||||
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Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-36260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | ||||||||||||||||||||
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Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 2110-2170 ... | SMD/SMT | H-37260-2 | + 150 C | Reel | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB | ||||||||||||||||||||
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Infineon Technologies | RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 | SMD/SMT | H-36260-2 | + 150 C | Tray | 200 W | Si | N-Channel | 65 V | 1.6 A | 50 mOhms | 15.8 dB |