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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Output Power Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Gain
MRF8P20161HSR3
Per Unit
$97.3100
RFQ
NXP / Freescale RF MOSFET Transistors HV8 2GHZ 161W NI780HS-4 SMD/SMT NI-780S-4 + 150 C Reel 37 W Si N-Channel 65 V 16.5 dB at 1.9 GHz
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