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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Packaging Output Power Technology Test Current Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Frequency Gain Gate to Source Voltage (Vgs) RoHS Max Power Dissipation Test Voltage
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Per Unit
$3.4608
RFQ
3,056
In-stock
Toshiba       12 W   750 mA         520 MHz 10.8 dB 10 V 20 W 7.2 V
RFM12U7X(TE12L,Q)
Per Unit
$4.7600
RFQ
Toshiba RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 4A 20W 20V SMD/SMT PW-X-4 Reel 12 W Si   N-Channel 20 V 4 A     10.8 dB        
BLF25M612,118
RFQ
NXP Semiconductors RF MOSFET Transistors 2.4-2.5GHz 65V 19dB SMD/SMT SOT-975A-2 Reel 12 W Si     65 V 10 mA 1.3 Ohms   19 dB        
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