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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Output Power | Technology | Test Current | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Frequency | Gain | Number of Pins | Number of Elements | Input Capacitance | Max Frequency | Element Configuration | Radiation Hardening | Max Operating Temperature | Power Dissipation | Gate to Source Voltage (Vgs) | Mount | Min Operating Temperature | Lead Free | Case/Package | RoHS | Test Voltage | |
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13,806
In-stock
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STMicroelectronics | 120 W | 400 mA | 860 MHz | 16 dB | 2.0 | 221 pF | 1 GHz | Dual | No | 20 V | Screw | Lead Free | M | 32 V | ||||||||||||||||||
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STMicroelectronics | RF MOSFET Transistors N-Ch 65 Volt 14 Amp | SMD/SMT | M252 | + 150 C | Tube | 120 W | Si | N-Channel | 65 V | 14 A | 14 dB at 960 MHz | ||||||||||||||||||||||
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STMicroelectronics | RF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz | SMD/SMT | M246 | + 150 C | Bulk | 120 W | Si | N-Channel | 80 V | 18 A | 18 dB at 860 MHz | ||||||||||||||||||||||
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Infineon Technologies | RF MOSFET Transistors Hi Pwr RF LDMOS FET 120 W 920-960 M... | SMD/SMT | H-37248-2 | + 150 C | Reel | 120 W | Si | N-Channel | 65 V | 750 mA | 0.07 Ohms at 10 V | 19 dB |