- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Speed | Mounting Type | Part Status | Supplier Device Package | Diode Type | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | |
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 1A DO214AC | DO-214AC, SMA | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Standard | 400V | 1.1V @ 1A | 1.5µs | 1µA @ 400V | -55°C ~ 175°C | 1A | 12pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 1A SUB SMA | DO-219AB | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 600V | 1.1V @ 1A | 1.8µs | 5µA @ 600V | -55°C ~ 175°C | 1A | 9pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 1.5A DO214AC | DO-214AC, SMA | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | DO-214AC (SMA) | Standard | 1000V | 1.1V @ 1.5A | 1.5µs | 5µA @ 1000V | -55°C ~ 150°C | 1.5A | 30pF @ 4V, 1MHz | |||||
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Taiwan Semiconductor Corporation | DIODE GEN PURP 1KV 1A SUB SMA | DO-219AB | - | Standard Recovery >500ns, > 200mA (Io) | Surface Mount | Active | Sub SMA | Standard | 1000V | 1.1V @ 1A | 1.8µs | 5µA @ 1000V | -55°C ~ 175°C | 1A | 9pF @ 4V, 1MHz |