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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
LE79212JCT
RFQ
Microsemi Corporation MOSFET N-CH 1200V 15A SP1 SP1 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP1 N-Channel 1200V 6696pF @ 25V 357W (Tc) 15A (Tc) 10V 816 mOhm @ 12A, 10V 5V @ 2.5mA 260nC @ 10V ±30V -
LE58QL061VC
RFQ
Microsemi Corporation MOSFET N-CH 1200V 15A SP1 SP1 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP1 N-Channel 1200V 6696pF @ 25V 357W (Tc) 15A (Tc) 10V 816 mOhm @ 12A, 10V 5V @ 2.5mA 260nC @ 10V ±30V -
LE58QL021JC
RFQ
Microsemi Corporation MOSFET N-CH 1000V 20A SP1 SP1 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP1 N-Channel 1000V 6800pF @ 25V 357W (Tc) 20A (Tc) 10V 480 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V ±30V -
LE58QL021FJ
RFQ
Microsemi Corporation MOSFET N-CH 1000V 20A SP1 SP1 - Bulk MOSFET (Metal Oxide) Chassis Mount -40°C ~ 150°C (TJ) Obsolete SP1 N-Channel 1000V 6800pF @ 25V 357W (Tc) 20A (Tc) 10V 480 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V ±30V -
JANTX1N914B
RFQ
Microsemi Corporation MOSFET N-CH 500V 38A ISOTOP SOT-227-4, miniBLOC POWER MOS 8™ Tube MOSFET (Metal Oxide) Chassis Mount -55°C ~ 150°C (TJ) Active ISOTOP® N-Channel 500V 8800pF @ 25V 357W (Tc) 38A (Tc) 10V 100 mOhm @ 28A, 10V 5V @ 2.5mA 220nC @ 10V ±30V -
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