- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 1200V 15A SP1 | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Obsolete | SP1 | N-Channel | 1200V | 6696pF @ 25V | 357W (Tc) | 15A (Tc) | 10V | 816 mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1200V 15A SP1 | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Obsolete | SP1 | N-Channel | 1200V | 6696pF @ 25V | 357W (Tc) | 15A (Tc) | 10V | 816 mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 20A SP1 | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Obsolete | SP1 | N-Channel | 1000V | 6800pF @ 25V | 357W (Tc) | 20A (Tc) | 10V | 480 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 20A SP1 | - | Bulk | MOSFET (Metal Oxide) | Chassis Mount | -40°C ~ 150°C (TJ) | Obsolete | SP1 | N-Channel | 1000V | 6800pF @ 25V | 357W (Tc) | 20A (Tc) | 10V | 480 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V |