- Package / Case :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | P CHANNEL MOSFET TO-39 | TO-205AF Metal Can | Military, MIL-PRF-19500/630 | Tray | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C | Obsolete | TO-205AF (TO-39) | P-Channel | 100V | - | 25W (Tc) | 6.5A (Tc) | 12V | 350 mOhm @ 6.5A, 12V | 4V @ 1mA | 45nC @ 12V | ±20V | ||||
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Microsemi Corporation | N CHANNEL MOSFET TO-257 RAD | TO-257-3 | Military, MIL-PRF-19500/614 | Tray | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-257 | N-Channel | 200V | - | 2W (Ta), 75W (Tc) | 9.4A (Tc) | 12V | 490 mOhm @ 9.4A, 12V | 4V @ 1mA | 50nC @ 12V | ±20V | ||||
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Microsemi Corporation | N CHANNEL MOSFET TO-257 RAD | TO-257-3 | Military, MIL-PRF-19500/614 | Tray | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-257 | N-Channel | 100V | - | 2W (Ta), 75W (Tc) | 14.4A (Tc) | 12V | 200 mOhm @ 14.4A, 12V | 4V @ 1mA | 40nC @ 12V | ±20V | ||||
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Microsemi Corporation | N CHANNEL MOSFET TO-254 | TO-254-3, TO-254AA (Straight Leads) | Military, MIL-PRF-19500/603 | Tray | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C | Obsolete | TO-254AA | N-Channel | 200V | - | 150W (Tc) | 26A (Tc) | 12V | 110 mOhm @ 26A, 12V | 4V @ 1mA | 170nC @ 12V | ±20V |