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Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Rds On (Max) @ Id, Vgs :
350 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
LX5115CPW
RFQ
Microsemi Corporation P CHANNEL MOSFET TO-39 TO-205AF Metal Can Military, MIL-PRF-19500/630 Tray MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C Obsolete TO-205AF (TO-39) P-Channel 100V - 25W (Tc) 6.5A (Tc) 12V 350 mOhm @ 6.5A, 12V 4V @ 1mA 45nC @ 12V ±20V -
LX5115CD
RFQ
Microsemi Corporation N CHANNEL MOSFET TO-257 RAD TO-257-3 Military, MIL-PRF-19500/614 Tray MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-257 N-Channel 200V - 2W (Ta), 75W (Tc) 9.4A (Tc) 12V 490 mOhm @ 9.4A, 12V 4V @ 1mA 50nC @ 12V ±20V -
LX5112CPW
RFQ
Microsemi Corporation N CHANNEL MOSFET TO-257 RAD TO-257-3 Military, MIL-PRF-19500/614 Tray MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-257 N-Channel 100V - 2W (Ta), 75W (Tc) 14.4A (Tc) 12V 200 mOhm @ 14.4A, 12V 4V @ 1mA 40nC @ 12V ±20V -
LX5111CPW
RFQ
Microsemi Corporation N CHANNEL MOSFET TO-254 TO-254-3, TO-254AA (Straight Leads) Military, MIL-PRF-19500/603 Tray MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C Obsolete TO-254AA N-Channel 200V - 150W (Tc) 26A (Tc) 12V 110 mOhm @ 26A, 12V 4V @ 1mA 170nC @ 12V ±20V -
LX1994CLD-TR
RFQ
Microsemi Corporation MOSFET N-CH 700V TO247 TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-247 N-Channel 1700V 249pF @ 1000V 65W (Tc) 5A (Tc) 20V 1.25 Ohm @ 2.5A, 20V 3.2V @ 500µA 21nC @ 20V +25V, -10V -
LX1994CLD
RFQ
Microsemi Corporation MOSFET N-CH 700V D3PAK TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole - Obsolete TO-247 - 700V - - 35A - - - - - -
LX1993CDU/T
RFQ
Microsemi Corporation MOSFET N-CH 700V TO247 TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-247 N-Channel 700V 1035pF @ 700V 176W (Tc) 35A (Tc) 20V 145 mOhm @ 10A, 20V 2.5V @ 1mA 67nC @ 20V +25V, -10V -
LX1970IDU-TR
RFQ
Microsemi Corporation MOSFET N-CH 400V 37A TO247AD TO-247-3 POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 400V 5400pF @ 25V 370W (Tc) 37A (Tc) 10V 120 mOhm @ 18.5A, 10V 4V @ 1mA 290nC @ 10V ±30V -
LX1914CLM-TR
RFQ
Microsemi Corporation MOSFET N-CH 400V 37A TO247AD TO-247-3 POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 400V 5400pF @ 25V 370W (Tc) 37A (Tc) 10V 120 mOhm @ 18.5A, 10V 4V @ 1mA 290nC @ 10V ±30V -
LX1722CDB-TR
RFQ
Microsemi Corporation MOSFET N-CH 800V 13A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 800V 2950pF @ 25V 310W (Tc) 13A (Tc) 10V 750 mOhm @ 6.5A, 10V 4V @ 1mA 130nC @ 10V ±30V -
LX1710CDB
RFQ
Microsemi Corporation MOSFET N-CH 600V 18A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 600V 2950pF @ 25V 310W (Tc) 18A (Tc) 10V 400 mOhm @ 9A, 10V 4V @ 1mA 130nC @ 10V ±30V -
LX1708ILQ-TR
RFQ
Microsemi Corporation MOSFET N-CH 600V 18A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 600V 2950pF @ 25V 310W (Tc) 18A (Tc) 10V 400 mOhm @ 9A, 10V 4V @ 1mA 130nC @ 10V ±30V -
LX1708ILQ
RFQ
Microsemi Corporation MOSFET N-CH 600V 23A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 600V 3500pF @ 25V 360W (Tc) 23A (Tc) 10V 300 mOhm @ 11.5A, 10V 4V @ 1mA 210nC @ 10V ±30V -
LX1705ILQ
RFQ
Microsemi Corporation MOSFET N-CH 500V 23A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 500V 2950pF @ 25V 310W (Tc) 23A (Tc) 10V 250 mOhm @ 11.5A, 10V 4V @ 1mA 130nC @ 10V ±30V -
LX1704CLQ
RFQ
Microsemi Corporation MOSFET N-CH 500V 27A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 500V 3500pF @ 25V 360W (Tc) 27A (Tc) 10V 220 mOhm @ 13.5A, 10V 4V @ 1mA 210nC @ 10V ±30V -
LX1701CLQ-TR
RFQ
Microsemi Corporation MOSFET N-CH 500V 28A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 500V 3500pF @ 25V 360W (Tc) 28A (Tc) 10V 200 mOhm @ 14A, 10V 4V @ 1mA 210nC @ 10V ±30V -
LX1701CLQ
RFQ
Microsemi Corporation MOSFET N-CH 500V 28A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 500V 3500pF @ 25V 360W (Tc) 28A (Tc) 10V 200 mOhm @ 14A, 10V 4V @ 1mA 210nC @ 10V ±30V -
LX1696AIPW-T
RFQ
Microsemi Corporation MOSFET N-CH 400V 11A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 400V 950pF @ 25V 180W (Tc) 11A (Tc) 10V 650 mOhm @ 5.5A, 10V 4V @ 1mA 55nC @ 10V ±30V -
LX1692IPW-TR TSSOP20
RFQ
Microsemi Corporation MOSFET N-CH 1000V 8A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 1000V 1800pF @ 25V 240W (Tc) 8A (Tc) 10V 1.6 Ohm @ 4A, 10V 4V @ 1mA 105nC @ 10V ±30V -
LX1692IPW-TR
RFQ
Microsemi Corporation MOSFET N-CH 1000V 11A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 1000V 2950pF @ 25V 310W (Tc) 11A (Tc) 10V 1 Ohm @ 5.5A, 10V 4V @ 1mA 130nC @ 10V ±30V -
LX1692IPW/MSC1692IPW
RFQ
Microsemi Corporation MOSFET N-CH 1000V 10.5A TO247AD TO-247-3 POWER MOS IV® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247AD N-Channel 1000V 2950pF @ 25V 310W (Tc) 10.5A (Tc) 10V 1.1 Ohm @ 5.25A, 10V 4V @ 1mA 130nC @ 10V ±30V -
LX1692IPW
RFQ
Microsemi Corporation MOSFET P-CHANNEL 100V 25A TO3 TO-204AA, TO-3 - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3 P-Channel 100V 3000pF @ 25V 150W (Tc) 25A (Tc) 10V 200 mOhm @ 15.8A, 10V 4V @ 250µA - ±20V -
LX1692IDW-TR SOP20
RFQ
Microsemi Corporation MOSFET P-CHANNEL 100V 25A TO3 TO-204AA, TO-3 - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3 P-Channel 100V 3000pF @ 25V 150W (Tc) 25A (Tc) 10V 200 mOhm @ 15.8A, 10V 4V @ 250µA - ±20V -
LX1692FIDW-TR
RFQ
Microsemi Corporation MOSFET P-CHANNEL 100V 25A TO3 TO-204AA, TO-3 - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-3 P-Channel 100V 3000pF @ 25V 150W (Tc) 25A (Tc) 10V 200 mOhm @ 15.8A, 10V 4V @ 250µA - ±20V -
LX1692EIDW
RFQ
Microsemi Corporation POWER MOSFET - SIC TO-247-3 - Bulk SiCFET (Silicon Carbide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-247 N-Channel 1200V - 555W (Tc) 80A (Tc) 20V 55 mOhm @ 40A, 20V 2.5V @ 1mA 235nC @ 20V +25V, -10V -
LX1692AIPW-TR
RFQ
Microsemi Corporation POWER MOSFET - SIC TO-247-3 - Bulk SiCFET (Silicon Carbide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-247 [B] N-Channel 700V - 300W (Tc) 65A (Tc) 20V 70 mOhm @ 32.5A, 20V 2.5V @ 1mA 125nC @ 20V +25V, -10V -
LX1692AIPW
RFQ
Microsemi Corporation POWER MOSFET - SIC TO-247-3 - Bulk SiCFET (Silicon Carbide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-247 N-Channel 1200V - 175W (Tc) 25A (Tc) 20V 175 mOhm @ 10A, 20V 2.5V @ 1mA 72nC @ 20V +25V, -10V -
LX1691AIPW-TR
RFQ
Microsemi Corporation MOSFET N-CH 1200V 41A TO247 TO-247-3 - Bulk SiCFET (Silicon Carbide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-247 N-Channel 1200V 2560pF @ 1000V 273W (Tc) 41A (Tc) 20V 100 mOhm @ 20A, 20V 3V @ 1mA (Typ) 130nC @ 20V +25V, -10V -
LX1689CPW-TR
RFQ
Microsemi Corporation MOSFET N-CH 500V 12A TO-254AA TO-254-3, TO-254AA (Straight Leads) - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-254AA N-Channel 500V - 4W (Ta), 150W (Tc) 12A (Ta) 10V 500 mOhm @ 12A, 10V 4V @ 250µA 120nC @ 10V ±20V -
LX1689CPW
RFQ
Microsemi Corporation MOSFET N-CH 400V 14A TO-254AA TO-254-3, TO-254AA (Straight Leads) - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-254AA N-Channel 400V - 4W (Ta), 150W (Tc) 14A (Ta) 10V 400 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V ±20V -
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