- Package / Case :
- Series :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Vgs (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 700V TO247 | TO-247-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-247 | N-Channel | 1700V | 249pF @ 1000V | 65W (Tc) | 5A (Tc) | 20V | 1.25 Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21nC @ 20V | +25V, -10V | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 5A TO-220 | TO-220-3 | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220 [K] | N-Channel | 1000V | 1409pF @ 25V | 225W (Tc) | 5A (Tc) | 10V | 2.8 Ohm @ 3A, 10V | 5V @ 500µA | 43nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 1200V 5A TO220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220 [K] | N-Channel | 1200V | 1385pF @ 25V | 225W (Tc) | 5A (Tc) | 10V | 4 Ohm @ 2A, 10V | 5V @ 1mA | 43nC @ 10V | ±30V |