- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi Corporation | P CHANNEL MOSFET TO-39 | TO-205AF Metal Can | Military, MIL-PRF-19500/630 | Tray | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C | Obsolete | TO-205AF (TO-39) | P-Channel | 100V | 25W (Tc) | 6.5A (Tc) | 12V | 350 mOhm @ 6.5A, 12V | 4V @ 1mA | 45nC @ 12V | ±20V | |||||
|
Microsemi Corporation | MOSFET P-CH 100V TO-205AF TO-39 | TO-205AF Metal Can | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-39 | P-Channel | 100V | 800mW (Ta), 25W (Tc) | 6.5A (Tc) | 10V | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V | |||||
|
Microsemi Corporation | MOSFET P-CH 100V 6.5A | TO-205AF Metal Can | Military, MIL-PRF-19500/564 | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-205AF (TO-39) | P-Channel | 100V | 800mW (Ta), 25W (Tc) | 6.5A (Tc) | 10V | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V | |||||
|
Microsemi Corporation | MOSFET P-CH 100V 6.5A TO-39 | TO-205AF Metal Can | Military, MIL-PRF-19500/564 | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-39 | P-Channel | 100V | 800mW (Ta), 25W (Tc) | 6.5A (Tc) | 10V | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V | |||||
|
Microsemi Corporation | MOSFET P-CH 100V TO-205AF TO-39 | TO-205AF Metal Can | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-39 | P-Channel | 100V | 800mW (Ta), 25W (Tc) | 6.5A (Tc) | 10V | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V |