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Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
JX2N2905A
RFQ
Microsemi Corporation MOSFET N-CH 300V 40A TO-247 TO-247-3 POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247 [B] N-Channel 300V 4950pF @ 25V 300W (Tc) 40A (Tc) 10V 85 mOhm @ 500mA, 10V 4V @ 1mA 195nC @ 10V ±30V -
JX2N2222AUA
RFQ
Microsemi Corporation MOSFET N-CH 300V 76A T-MAX TO-247-3 Variant POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole - Obsolete T-MAX™ [B2] N-Channel 300V 10200pF @ 25V - 76A (Tc) - 40 mOhm @ 500mA, 10V 4V @ 2.5mA 425nC @ 10V - -
HZK12BTR
Per Unit
$15.2563
RFQ
Microsemi Corporation MOSFET N-CH 300V 48A TO-247 TO-247-3 POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 300V 5870pF @ 25V 370W (Tc) 48A (Tc) 10V 70 mOhm @ 500mA, 10V 4V @ 1mA 225nC @ 10V ±30V -
HWXP741-1
Per Unit
$10.8975
RFQ
Microsemi Corporation MOSFET N-CH 300V 40A TO-247 TO-247-3 POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 300V 4950pF @ 25V 300W (Tc) 40A (Tc) 10V 85 mOhm @ 500mA, 10V 4V @ 1mA 195nC @ 10V ±30V -
HT-120N
Per Unit
$16.0000
RFQ
Microsemi Corporation MOSFET N-CH 300V 48A TO-247 TO-247-3 POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 300V 5870pF @ 25V 370W (Tc) 48A (Tc) 10V 70 mOhm @ 500mA, 10V 4V @ 1mA 225nC @ 10V ±30V -
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