- Package / Case :
- Series :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 600V 60A TO-247 | TO-247-3 Variant | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | T-MAX™ [B2] | N-Channel | 600V | 11300pF @ 25V | 1040W (Tc) | 60A (Tc) | 10V | 110 mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 600V 60A TO-264 | TO-264-3, TO-264AA | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 [L] | N-Channel | 600V | 11300pF @ 25V | 1040W (Tc) | 60A (Tc) | 10V | 110 mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 600V 56A T-MAX | TO-247-3 Variant | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 600V | 11300pF @ 25V | 1040W (Tc) | 60A (Tc) | 10V | 130 mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V | ||||
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Microsemi Corporation | MOSFET N-CH 600V 56A TO-264 | TO-264-3, TO-264AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 | N-Channel | 600V | 11300pF @ 25V | 1040W (Tc) | 60A (Tc) | 10V | 130 mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | ±30V |