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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
LE79R251JCT
RFQ
Microsemi Corporation MOSFET N-CH 600V 60A TO-247 TO-247-3 Variant POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ [B2] N-Channel 600V 11300pF @ 25V 1040W (Tc) 60A (Tc) 10V 110 mOhm @ 28A, 10V 5V @ 2.5mA 280nC @ 10V ±30V -
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