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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
LD110CJ
RFQ
Microsemi Corporation MOSFET N-CH 800V 33A TO-264 TO-264-3, TO-264AA POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole Obsolete TO-264 [L] N-Channel 800V 7740pF @ 25V 33A (Tc) 10V 240 mOhm @ 16.5A, 10V 4V @ 2.5mA 425nC @ 10V
JX2N2222AUA
RFQ
Microsemi Corporation MOSFET N-CH 300V 76A T-MAX TO-247-3 Variant POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole Obsolete T-MAX™ [B2] N-Channel 300V 10200pF @ 25V 76A (Tc) - 40 mOhm @ 500mA, 10V 4V @ 2.5mA 425nC @ 10V
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