- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Microsemi Corporation | MOSFET N-CH 600V 35A T-MAX | TO-247-3 Variant | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | T-MAX™ [B2] | N-Channel | 600V | 4500pF @ 25V | 500W (Tc) | 35A (Tc) | 10V | 170 mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 600V 35A TO-264 | TO-264-3, TO-264AA | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-264 [L] | N-Channel | 600V | 4500pF @ 25V | 500W (Tc) | 35A (Tc) | 10V | 170 mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 14A TO-247 | TO-247-3 | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 1000V | 3965pF @ 25V | 500W (Tc) | 14A (Tc) | 10V | 980 mOhm @ 7A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 800V 18A TO-247 | TO-247-3 | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 800V | 3757pF @ 25V | 500W (Tc) | 18A (Tc) | 10V | 580 mOhm @ 9A, 10V | 5V @ 1mA | 122nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 14A TO-247 | TO-247-3 | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 1000V | 3965pF @ 25V | 500W (Tc) | 14A (Tc) | 10V | 900 mOhm @ 7A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 800V 19A TO-247 | TO-247-3 | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 800V | 3760pF @ 25V | 500W (Tc) | 19A (Tc) | 10V | 530 mOhm @ 9A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 800V 19A TO-247 | TO-247-3 | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 800V | 3760pF @ 25V | 500W (Tc) | 19A (Tc) | 10V | 530 mOhm @ 9A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | - |