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Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
HVU307TRF
Per Unit
$15.6200
RFQ
Microsemi Corporation MOSFET N-CH 600V 77A TO-247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 600V 13600pF @ 25V 481W (Tc) 77A (Tc) 10V 41 mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260nC @ 10V ±20V Super Junction
HSR15T60SP
Per Unit
$28.3900
RFQ
Microsemi Corporation MOSFET N-CH 600V 94A TO264 TO-264-3, TO-264AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active 264 MAX™ [L2] N-Channel 600V 13600pF @ 25V 833W (Tc) 94A (Tc) 10V 35 mOhm @ 60A, 10V 3.9V @ 5.4mA 640nC @ 10V ±20V -
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