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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
JTXV2N4858-MIL-S-19500
RFQ
Microsemi Corporation MOSFET N-CH 1200V 27A TO-264 TO-264-3, TO-264AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-264 [L] N-Channel 1200V 9670pF @ 25V 1135W (Tc) 27A (Tc) 10V 650 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V ±30V -
HZM6ATL
Per Unit
$25.1397
RFQ
Microsemi Corporation MOSFET N-CH 1200V 27A T-MAX TO-247-3 Variant - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ N-Channel 1200V 9670pF @ 25V 1135W (Tc) 27A (Tc) 10V 650 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V ±30V -
HSM123TRF
Per Unit
$24.7500
RFQ
Microsemi Corporation MOSFET N-CH 1200V 29A TO264 TO-264-3, TO-264AA POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-264 [L] N-Channel 1200V 9670pF @ 25V 1135W (Tc) 29A (Tc) 10V 530 mOhm @ 14A, 10V 5V @ 2.5mA 300nC @ 10V ±30V -
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