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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
JM3851030102BCA
RFQ
Microsemi Corporation MOSFET N-CH 200V 67A TO-247 TO-247-3 POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247 [B] N-Channel 200V 6120pF @ 25V 370W (Tc) 67A (Tc) 10V 38 mOhm @ 500mA, 10V 4V @ 1mA 225nC @ 10V ±30V -
HY64UD16162B-DF70E
Per Unit
$13.0562
RFQ
Microsemi Corporation MOSFET N-CH 200V 67A TO-247 TO-247-3 POWER MOS V® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 200V 6120pF @ 25V 370W (Tc) 67A (Tc) 10V 38 mOhm @ 500mA, 10V 4V @ 1mA 225nC @ 10V ±30V -
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