1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Microsemi Corporation | MOSFET N-CH 1200V 41A TO247 | TO-247-3 | - | Bulk | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-247 | N-Channel | 1200V | 2560pF @ 1000V | 273W (Tc) | 41A (Tc) | 20V | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | +25V, -10V |