- Package / Case :
- Series :
- Technology :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Vgs (Max) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Microsemi Corporation | MOSFET N-CH 700V TO247 | TO-247-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-247 | N-Channel | 700V | 1035pF @ 700V | 176W (Tc) | 35A (Tc) | 20V | 145 mOhm @ 10A, 20V | 2.5V @ 1mA | 67nC @ 20V | +25V, -10V | - | ||||
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Microsemi Corporation | MOSFET N-CH 500V 35A TO-247 | TO-247-3 | POWER MOS 7® | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247 | N-Channel | 500V | 3261pF @ 25V | 403W (Tc) | 35A (Tc) | 10V | 140 mOhm @ 17.5A, 10V | 5V @ 1mA | 72nC @ 10V | ±30V | - | |||||
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Microsemi Corporation | MOSFET N-CH 600V 35A T-MAX | TO-247-3 Variant | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | T-MAX™ [B2] | N-Channel | 600V | 4500pF @ 25V | 500W (Tc) | 35A (Tc) | 10V | 170 mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 600V 35A TO-264 | TO-264-3, TO-264AA | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-264 [L] | N-Channel | 600V | 4500pF @ 25V | 500W (Tc) | 35A (Tc) | 10V | 170 mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 35A TO264 | TO-264-3, TO-264AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 [L] | N-Channel | 1000V | 9835pF @ 25V | 1135W (Tc) | 35A (Tc) | 10V | 400 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 35A T-MAX | TO-247-3 Variant | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | T-MAX™ [B2] | N-Channel | 1000V | 9835pF @ 25V | 1135W (Tc) | 35A (Tc) | 10V | 380 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 500V 35A TO-247 | TO-247-3 | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 500V | 3261pF @ 25V | 403W (Tc) | 35A (Tc) | 10V | 140 mOhm @ 17.5A, 10V | 5V @ 1mA | 72nC @ 10V | ±30V | - |