Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
HY64SD16162B-DF85EDR
Per Unit
$12.8694
RFQ
Microsemi Corporation MOSFET N-CH 500V 56A TO-264 TO-264-3, TO-264AA POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-264 [L] N-Channel 500V 8800pF @ 25V 780W (Tc) 56A (Tc) 10V 100 mOhm @ 28A, 10V 5V @ 2.5mA 220nC @ 10V ±30V -
HWXQ205-5
Per Unit
$11.1465
RFQ
Microsemi Corporation MOSFET N-CH 500V 56A T-MAX TO-247-3 Variant - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ N-Channel 500V 8800pF @ 25V 780W (Tc) 56A (Tc) 10V 100 mOhm @ 28A, 10V 5V @ 2.5mA 220nC @ 10V ±30V -
HSR101-01TRE
Per Unit
$13.5500
RFQ
Microsemi Corporation MOSFET N-CH 500V 56A TO-264 TO-264-3, TO-264AA - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-264 N-Channel 500V 8800pF @ 25V 780W (Tc) 56A (Tc) 10V 100 mOhm @ 28A, 10V 5V @ 2.5mA 220nC @ 10V ±30V -
HSM123JTL
Per Unit
$15.5500
RFQ
Microsemi Corporation MOSFET N-CH 500V 56A TO-247 TO-247-3 Variant POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active T-MAX™ [B2] N-Channel 500V 8800pF @ 25V 780W (Tc) 56A (Tc) 10V 100 mOhm @ 28A, 10V 5V @ 2.5mA 220nC @ 10V ±30V -
Page 1 / 1