- Technology :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.2 Ohm @ 7A, 10V (2)
- 1.4 Ohm @ 7A, 10V (1)
- 105 mOhm @ 24A, 10V (4)
- 120 mOhm @ 22.5A, 10V (1)
- 130 mOhm @ 21A, 10V (2)
- 29 mOhm @ 45A, 10V (1)
- 390 mOhm @ 12A, 10V (2)
- 430 mOhm @ 12A, 10V (1)
- 500 mOhm @ 12A, 10V (1)
- 55 mOhm @ 40A, 20V (1)
- 700 mOhm @ 9A, 10V (1)
- 780 mOhm @ 9A, 10V (1)
- 80 mOhm @ 34A, 10V (2)
- 800 mOhm @ 9A, 10V (1)
- 9 mOhm @ 50A, 10V (1)
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Vgs (Max) :
- Applied Filters :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | MOSFET N-CHAN 650V 23A POWERPAK | TO-247-3 | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | SUPER-247 (TO-274AA) | N-Channel | 650V | 11826pF @ 100V | 625W (Tc) | 87A (Tc) | 10V | 29 mOhm @ 45A, 10V | 4V @ 250µA | 591nC @ 10V | ±30V | - | |||||
|
|
Vishay Semiconductor Diodes Division | MOSFET N-CH 500V 38A SOT-227 | SOT-227-4, miniBLOC | HEXFET® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-227 | N-Channel | 500V | 10000pF @ 25V | 625W (Tc) | 57A (Tc) | 10V | 80 mOhm @ 34A, 10V | 4V @ 250µA | 338nC @ 10V | ±20V | - | ||||
|
|
|
Microsemi Corporation | POWER MOSFET - SIC | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Bulk | SiCFET (Silicon Carbide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D3Pak | N-Channel | 1200V | - | 625W (Tc) | 80A (Tc) | 20V | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | +25V, -10V | - | ||||
|
|
Microsemi Corporation | MOSFET N-CH 1000V 17A D3PAK | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D3Pak | N-Channel | 1000V | 4845pF @ 25V | 625W (Tc) | 17A (Tc) | 10V | 780 mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | - | ||||
|
|
Microsemi Corporation | MOSFET N-CH 100V 100A T-MAX | TO-247-3 Variant | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | T-MAX™ [B2] | N-Channel | 100V | 9875pF @ 25V | 625W (Tc) | 100A (Tc) | 10V | 9 mOhm @ 50A, 10V | 4V @ 2.5mA | 350nC @ 10V | ±30V | - | ||||
|
|
|
Microsemi Corporation | MOSFET N-CH 1200V 14A D3PAK | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D3Pak | N-Channel | 1200V | 4765pF @ 25V | 625W (Tc) | 14A (Tc) | 10V | 1.2 Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | - | ||||
|
|
|
Microsemi Corporation | MOSFET N-CH 500V 42A D3PAK | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D3Pak | N-Channel | 500V | 6810pF @ 25V | 625W (Tc) | 42A (Tc) | 10V | 130 mOhm @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | ±30V | - | ||||
|
|
Microsemi Corporation | MOSFET N-CH 800V 25A D3PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | POWER MOS 8™ | Bulk | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D3Pak | N-Channel | 800V | 4595pF @ 25V | 625W (Tc) | 25A (Tc) | 10V | 390 mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | - | ||||
|
|
|
Microsemi Corporation | MOSFET N-CH 800V 22A D3PAK | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D3Pak | N-Channel | 800V | 4595pF @ 25V | 625W (Tc) | 23A (Tc) | 10V | 430 mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | - | ||||
|
|
Microsemi Corporation | MOSFET N-CH 800V 25A TO-247 | TO-247-3 | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 800V | 4595pF @ 25V | 625W (Tc) | 25A (Tc) | 10V | 390 mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | - | ||||
|
|
|
Microsemi Corporation | MOSFET N-CH 1000V 18A TO-247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 1000V | 4845pF @ 25V | 625W (Tc) | 18A (Tc) | 10V | 700 mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | - | ||||
|
|
|
Microsemi Corporation | MOSFET N-CH 1200V 14A TO-247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 1200V | 4765pF @ 25V | 625W (Tc) | 14A (Tc) | 10V | 1.2 Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | - | ||||
|
|
|
Microsemi Corporation | MOSFET N-CH 500V 42A TO-247 | TO-247-3 | POWER MOS 8™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 500V | 6810pF @ 25V | 625W (Tc) | 42A (Tc) | 10V | 130 mOhm @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | ±30V | - | ||||
|
|
|
Microsemi Corporation | MOSFET N-CH 1000V 17A TO-247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 1000V | 4845pF @ 25V | 625W (Tc) | 17A (Tc) | 10V | 800 mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | - | ||||
|
|
|
Microsemi Corporation | MOSFET N-CH 800V 22A TO-247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 800V | 4595pF @ 25V | 625W (Tc) | 23A (Tc) | 10V | 500 mOhm @ 12A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | - | ||||
|
|
Microsemi Corporation | MOSFET N-CH 1200V 14A TO247 | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 1200V | 4765pF @ 25V | 625W (Tc) | 14A (Tc) | 10V | 1.4 Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 500V 48A TO-247 | TO-247-3 | UniFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247 | N-Channel | 500V | 6460pF @ 25V | 625W (Tc) | 48A (Tc) | 10V | 105 mOhm @ 24A, 10V | 5V @ 250µA | 137nC @ 10V | ±30V | - | ||||
|
|
|
ON Semiconductor | MOSFET N-CH 500V 48A TO-247 | TO-247-3 | UniFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | N-Channel | 500V | 6460pF @ 25V | 625W (Tc) | 48A (Tc) | 10V | 105 mOhm @ 24A, 10V | 5V @ 250µA | 137nC @ 10V | ±20V | - | ||||
|
|
ON Semiconductor | MOSFET N-CH 500V 48A TO-3P | TO-3P-3, SC-65-3 | UniFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-3PN | N-Channel | 500V | 6460pF @ 25V | 625W (Tc) | 48A (Tc) | 10V | 105 mOhm @ 24A, 10V | 5V @ 250µA | 137nC @ 10V | ±20V | - | ||||
|
|
|
ON Semiconductor | MOSFET N-CH 500V 45A TO-247 | TO-247-3 | UniFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247-3 | N-Channel | 500V | 6630pF @ 25V | 625W (Tc) | 45A (Tc) | 10V | 120 mOhm @ 22.5A, 10V | 5V @ 250µA | 137nC @ 10V | ±30V | - | ||||
|
|
|
ON Semiconductor | MOSFET N-CH 500V 48A TO-247 | TO-247-3 | UniFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247 | N-Channel | 500V | 6460pF @ 25V | 625W (Tc) | 48A (Tc) | 10V | 105 mOhm @ 24A, 10V | 5V @ 250µA | 137nC @ 10V | ±30V | - | ||||
|
|
|
Vishay Semiconductor Diodes Division | MOSFET N-CH 500V 57A SOT-227 | SOT-227-4, miniBLOC | HEXFET® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-227 | N-Channel | 500V | 10000pF @ 25V | 625W (Tc) | 57A (Tc) | 10V | 80 mOhm @ 34A, 10V | 4V @ 250µA | 338nC @ 10V | ±20V | - |