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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
HWXP747-1
Per Unit
$11.0012
RFQ
Microsemi Corporation MOSFET N-CH 800V 25A D3PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB POWER MOS 8™ Bulk MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D3Pak N-Channel 800V 4595pF @ 25V 625W (Tc) 25A (Tc) 10V 390 mOhm @ 12A, 10V 5V @ 1mA 150nC @ 10V ±30V
HWXP222A-1
Per Unit
$10.4615
RFQ
Microsemi Corporation MOSFET N-CH 800V 22A D3PAK TO-268-3, D³Pak (2 Leads + Tab), TO-268AA POWER MOS 8™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active D3Pak N-Channel 800V 4595pF @ 25V 625W (Tc) 23A (Tc) 10V 430 mOhm @ 12A, 10V 5V @ 1mA 150nC @ 10V ±30V
HWXP215A-1
Per Unit
$10.4615
RFQ
Microsemi Corporation MOSFET N-CH 800V 25A TO-247 TO-247-3 POWER MOS 8™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 800V 4595pF @ 25V 625W (Tc) 25A (Tc) 10V 390 mOhm @ 12A, 10V 5V @ 1mA 150nC @ 10V ±30V
HSK110TR
Per Unit
$12.7900
RFQ
Microsemi Corporation MOSFET N-CH 800V 22A TO-247 TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247 [B] N-Channel 800V 4595pF @ 25V 625W (Tc) 23A (Tc) 10V 500 mOhm @ 12A, 10V 5V @ 1mA 150nC @ 10V ±30V
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