- Series :
- Mounting Type :
- Part Status :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 500V 2.5A TO-262 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 500V | 886pF @ 100V | 114W (Tc) | 10.5A (Tc) | 10V | 380 mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | - | |||||
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Vishay Siliconix | MOSFET P-CH 20V 4.8A 2X2 4-MFP | 6-UFBGA | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-Micro Foot™ (1.5x1) | P-Channel | 20V | 600pF @ 10V | 2.77W (Ta), 13W (Tc) | 10.5A (Tc) | 1.2V, 4.5V | 80 mOhm @ 1A, 4.5V | 700mV @ 250µA | 13nC @ 5V | ±5V | - | ||||||
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Vishay Siliconix | MOSFET N-CH 650V 12A TO-220AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Bulk | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263) | N-Channel | 500V | 886pF @ 100V | 114W (Tc) | 10.5A (Tc) | 10V | 380 mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | - | |||||
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Vishay Siliconix | MOSFET N-CH 400V 490MA 4-DIP | TO-220-3 Full Pack | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 Full Pack | N-Channel | 500V | 886pF @ 100V | 32W (Tc) | 10.5A (Tc) | 10V | 380 mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | - | |||||
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Microsemi Corporation | MOSFET N-CH 1000V 10.5A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 1000V | 2950pF @ 25V | 310W (Tc) | 10.5A (Tc) | 10V | 1.1 Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAK (TO-262) | N-Channel | 600V | 1900pF @ 25V | 3.13W (Ta), 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | N-Channel | 600V | 1900pF @ 25V | 3.13W (Ta), 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | ||||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220-3 | N-Channel | 600V | 1900pF @ 25V | 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220F | N-Channel | 400V | 1090pF @ 25V | 44W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 400V | 1090pF @ 25V | 135W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - | ||||||
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ON Semiconductor | MOSFET P-CH 250V 10.5A TO-3P | TO-3P-3, SC-65-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-3PN | P-Channel | 250V | 1180pF @ 25V | 150W (Tc) | 10.5A (Tc) | 10V | 620 mOhm @ 5.25A, 10V | 5V @ 250µA | 38nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220F | N-Channel | 400V | 1090pF @ 25V | 44W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | N-Channel | 400V | 1090pF @ 25V | 135W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - | |||||
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Microsemi Corporation | MOSFET N-CH 1000V 10.5A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 1000V | 2950pF @ 25V | 310W (Tc) | 10.5A (Tc) | 10V | 1.1 Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAK (TO-262) | N-Channel | 600V | 1900pF @ 25V | 3.13W (Ta), 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220-3 | N-Channel | 600V | 1900pF @ 25V | 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220F | N-Channel | 400V | 1090pF @ 25V | 44W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - |