- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET N-CH 500V 2.5A TO-262 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 500V | 886pF @ 100V | 114W (Tc) | 10.5A (Tc) | 10V | 380 mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET P-CH 20V 4.8A 2X2 4-MFP | 6-UFBGA | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-Micro Foot™ (1.5x1) | P-Channel | 20V | 600pF @ 10V | 2.77W (Ta), 13W (Tc) | 10.5A (Tc) | 1.2V, 4.5V | 80 mOhm @ 1A, 4.5V | 700mV @ 250µA | 13nC @ 5V | ±5V | - | |||||
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Vishay Siliconix | MOSFET N-CH 650V 12A TO-220AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | Bulk | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263) | N-Channel | 500V | 886pF @ 100V | 114W (Tc) | 10.5A (Tc) | 10V | 380 mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CH 400V 490MA 4-DIP | TO-220-3 Full Pack | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 Full Pack | N-Channel | 500V | 886pF @ 100V | 32W (Tc) | 10.5A (Tc) | 10V | 380 mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | - | ||||
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Vishay Siliconix | MOSFET N-CHAN 800V FP TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | E | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TA) | Active | D-PAK (TO-252AA) | N-Channel | 550V | 886pF @ 100V | 114W (Tc) | 10.5A (Tc) | 10V | 380 mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | - | ||||
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Infineon Technologies | MOSFET N-CH 100V 10.5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | P-TO252-3 | N-Channel | 100V | 400pF @ 25V | 50W (Tc) | 10.5A (Tc) | 10V | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 700V 10.5A TO220-3 | TO-220-3 Full Pack | CoolMOS™ CE | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO220-3-31 Full Pack | N-Channel | 700V | 474pF @ 100V | 86W (Tc) | 10.5A (Tc) | 10V | 600 mOhm @ 1A, 10V | 3.5V @ 210µA | 22nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 700V | 474pF @ 100V | 86W (Tc) | 10.5A (Tc) | 10V | 600 mOhm @ 1A, 10V | 3.5V @ 0.21mA | 22nC @ 10V | ±20V | Super Junction | |||||
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Infineon Technologies | MOSFET N-CH 700V 10.5A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 700V | 474pF @ 100V | 86W (Tc) | 10.5A (Tc) | 10V | 600 mOhm @ 1A, 10V | 3.5V @ 210µA | 22nC @ 10V | ±20V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 10.5A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 1000V | 2950pF @ 25V | 310W (Tc) | 10.5A (Tc) | 10V | 1.1 Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET P-CH 100V 10.5A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D²PAK (TO-263AB) | P-Channel | 100V | 1035pF @ 25V | 3.8W (Ta), 66W (Tc) | 10.5A (Tc) | 10V | 300 mOhm @ 5.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAK (TO-262) | N-Channel | 600V | 1900pF @ 25V | 3.13W (Ta), 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | N-Channel | 600V | 1900pF @ 25V | 3.13W (Ta), 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220-3 | N-Channel | 600V | 1900pF @ 25V | 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220F | N-Channel | 400V | 1090pF @ 25V | 44W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET P-CH 100V 10.5A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220F | P-Channel | 100V | 1100pF @ 25V | 41W (Tc) | 10.5A (Tc) | 10V | 190 mOhm @ 5.25A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET P-CH 100V 10.5A TO-220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220-3 | P-Channel | 100V | 1035pF @ 25V | 66W (Tc) | 10.5A (Tc) | 10V | 300 mOhm @ 5.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | QFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 400V | 1090pF @ 25V | 135W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - | |||||
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ON Semiconductor | MOSFET P-CH 250V 10.5A TO-3P | TO-3P-3, SC-65-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-3PN | P-Channel | 250V | 1180pF @ 25V | 150W (Tc) | 10.5A (Tc) | 10V | 620 mOhm @ 5.25A, 10V | 5V @ 250µA | 38nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220F | N-Channel | 400V | 1090pF @ 25V | 44W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | N-Channel | 400V | 1090pF @ 25V | 135W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 1000V 10.5A TO247AD | TO-247-3 | POWER MOS IV® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247AD | N-Channel | 1000V | 2950pF @ 25V | 310W (Tc) | 10.5A (Tc) | 10V | 1.1 Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAK (TO-262) | N-Channel | 600V | 1900pF @ 25V | 3.13W (Ta), 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 600V 10.5A TO-220 | TO-220-3 | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220-3 | N-Channel | 600V | 1900pF @ 25V | 180W (Tc) | 10.5A (Tc) | 10V | 700 mOhm @ 5.3A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 400V 10.5A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220F | N-Channel | 400V | 1090pF @ 25V | 44W (Tc) | 10.5A (Tc) | 10V | 530 mOhm @ 5.25A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET P-CH 100V 10.5A TO-220F | TO-220-3 Full Pack | QFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220F | P-Channel | 100V | 1100pF @ 25V | 41W (Tc) | 10.5A (Tc) | 10V | 190 mOhm @ 5.25A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | - | ||||
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Infineon Technologies | MOSFET N-CH 100V 10.5A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | P-TO252-3 | N-Channel | 100V | 400pF @ 25V | 50W (Tc) | 10.5A (Tc) | 10V | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | ±20V | - | |||||
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STMicroelectronics | MOSFET N-CH 500V 10.5A ISOWAT218 | ISOWATT-218-3 | PowerMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | ISOWATT-218 | N-Channel | 500V | 3400pF @ 25V | 80W (Tc) | 10.5A (Tc) | 10V | 360 mOhm @ 7.5A, 10V | 5V @ 250µA | 80nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET P-CH 100V 10.5A TO-220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220-3 | P-Channel | 100V | 1035pF @ 25V | 66W (Tc) | 10.5A (Tc) | 10V | 300 mOhm @ 5.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±30V | - |